STM32C011F6U6 datasheet(62/94 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32C011x4/x6

62/94

DS13866 Rev 3

5.3.13

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 49 are derived from tests

performed under the conditions summarized in Table 23: General operating conditions. All

I/Os are designed as CMOS- and TTL-compliant.

Table 49. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL(1)

I/O input low level

voltage

All

2 V < VDDIO1 < 3.6 V

0.3 x VDDIO1

VIH(1)

I/O input high level

voltage

All

2 V < VDDIO1 < 3.6 V

0.7 x VDDIO1

Vhys(2) I/O input hysteresis -

200

Ilkg(3)

Input leakage

current(3)

0 < VIN ≤ VDDIO1

--70

VDDIO1 ≤ VIN ≤ VDDIO1 +1 V

600

VDDIO1 +1 V ≤ VIN

150

RPU

Weak pull-up

equivalent resistor

(4)

VIN = VSS

kΩ

RPD

Weak pull-down

equivalent resistor(4)

VIN = VDDIO1

kΩ

CIO

I/O pin capacitance

1. Refer to Figure 17: I/O input characteristics.

2. Specified by design – Not tested in production.

3. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following

formula: ITotal_Ileak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max).

4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimal (~10% order).

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