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STM32U535NET3QTR Datasheet(PDF) 182 Page - STMicroelectronics

Part # STM32U535NET3QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET3QTR Datasheet(HTML) 182 Page - STMicroelectronics

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Electrical characteristics
STM32U535xx
182/278
DS14217 Rev 1
twu(Stop 3)
Wake-up time from
Stop 3 to Run mode
All SRAMs retained
Wake-up in FLASH,
FSTEN = 0 in PWR_CR3
MSI 24 MHz
130
160
µs
Wake-up in FLASH,
FSTEN = 1 in PWR_CR3
MSI 24 MHz
32.5
37.0
HSI 16 MHz
32.0
36.0
MSI 1 MHz
72.5
94.0
Wake-up in SRAM2, range 4
MSI 24 MHz
26.5
31.0
HSI 16 MHz
28.0
32.0
MSI 1 MHz
68.5
89.0
twu(Standby
with SRAM2)
Wake-up time from
Standby with SRAM2 to
Run mode
Wake-up in FLASH,
FSTEN = 0 in PWR_CR3
MSI 4 MHz
61.5
80.0
Wake-up in FLASH,
FSTEN = 1 in PWR_CR3
MSI 4 MHz
61.5
80.0
MSI 1 MHz
150
240
twu(Standby)
Wake-up time from
Standby to Run mode
Wake-up in FLASH,
FSTEN = 0 in PWR_CR3
MSI 4 MHz
340
420
Wake-up in FLASH,
FSTEN = 1 in PWR_CR3
MSI 4 MHz
100
130
MSI 1 MHz
210
290
twu(Shutdown)
Wake-up time from
Shutdown to Run mode
-
MSI 4 MHz
610
710
1. Evaluated by characterization. Not tested in production.
Table 73. Low-power mode wake-up timings on SMPS(1) (continued)
Mode
Parameter
Conditions
Typ
(3 V,
30 °C)
Max
(3 V)
Unit
Table 74. Regulator mode transition times(1)
Symbol
Parameter
Conditions
Typ (3 V, 30 °C)
Max (3 V)
Unit
tLDO(2)
SMPS to LDO transition time
Range 4
16.0
20.0
µs
Range 3
15.0
17.0
Range 2
14.0
18.0
Range 1
14.0
16.0
tSMPS(2)
LDO to SMPS transition time
Range 4
14.0
16.0
Range 3
17.0
20.0
Range 2
16.0
19.0
Range 1
16.0
19.0



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