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STM32U535NET3QTR Datasheet(PDF) 186 Page - STMicroelectronics

Part # STM32U535NET3QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET3QTR Datasheet(HTML) 186 Page - STMicroelectronics

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Electrical characteristics
STM32U535xx
186/278
DS14217 Rev 1
Figure 30. AC timing diagram for low-speed external sinusoidal clock source
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in the table below.
In the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins, in order to minimize the output distortion and startup
stabilization time. Refer to the crystal resonator manufacturer for more details on the
resonator characteristics (frequency, package, accuracy).
MSv69160V1
VLSE_ext
VLSE_ext_PP
t
tLSE_ext = 1/fLSE_ext
Table 78. HSE oscillator characteristics(1)
Symbol
Parameter
Conditions(2)
Min
Typ
Max
Unit
fOSC_IN Oscillator frequency
-
4
-
50
MHz
RF
Feedback resistor
-
-
200
-
kΩ
IDD(HSE)
HSE current
consumption
During startup(3)
--
8
μA
VDD = 3 V, Rm = 30 Ω, CL = 10 pF @ 4 MHz
-
790
-
VDD = 3 V, Rm = 30 Ω, CL = 10 pF @ 8 MHz
-
910
-
VDD = 3 V, Rm = 45 Ω, CL = 10 pF @ 8 MHz
-
930
-
VDD = 3 V, Rm = 30 Ω, CL = 5 pF @ 48 MHz
-
1430
-
VDD = 3 V, Rm = 30 Ω, CL = 10 pF @ 48 MHz
-
1960
-
VDD = 3 V, Rm = 30 Ω, CL = 20 pF @ 48 MHz
-
3000
-
Gmcritmax
Maximum critical crystal
transconductance Gm
Startup
-
-
1.5
mA/V
tsu(HSE)
(4)
Startup time
VDD stabilized
-
2
-
ms
1. Specified by design. Not tested in production.



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