| Electronic Components Datasheet Search |
|
STM32U535NET3QTR Datasheet(PDF) 200 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32U535NET3QTR Datasheet(HTML) 200 Page - STMicroelectronics |
|
200 / 278 page ![]() Electrical characteristics STM32U535xx 200/278 DS14217 Rev 1 Static latch-up The following complementary static tests are required on three parts to assess the latch-up performance: • A supply overvoltage is applied to each power supply pin. • A current injection is applied to each input, output and configurable I/O pin. These tests are compliant with EIA/JESD 78E IC latch-up standard. 5.3.13 I/O current injection characteristics As a general rule, the current injection to the I/O pins, due to external voltage below VSS or above VDDIOx (for standard, 3.3 V-capable I/O pins) must be avoided during normal product operation. However, in order to give an indication of the robustness of the microcontroller if abnormal injection accidentally happens, some susceptibility tests are performed on a sample basis during the device characterization. Functional susceptibility to I/O current injection While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating-input mode. While this current is injected into the I/O pin, one at a time, the device is checked for functional failures. The failure is indicated by an out-of-range parameter, such as an ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of the -5 µA/+0 µA range), or other functional failure (for example reset occurrence or oscillator frequency deviation). The characterization results are given in the table below. The negative induced leakage current is caused by the negative injection. The positive induced leakage current is caused by the positive injection. 5.3.14 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in the table below are derived from tests performed under the conditions summarized in Table 32. All I/Os are designed as CMOS- and TTL-compliant. Table 90. I/O current injection susceptibility(1)(2) Symbol Description Functional susceptibility Unit Negative injection Positive injection IINJ Injected current on PA4 and PA5 pins 0 0 mA Injected current on other PA1, PA6, PA7, PB0, and PB1 pins 0N/A Injected current on all other pins 5 N/A 1. Evaluated by characterization. Not tested in production. 2. The I/O structure options listed in this table can be a concatenation of options including the option explicitly listed. For instance TT_a refers to any TT I/O with _a option. TT_xx refers to any TT I/O and FT_xx refers to any FT I/O. |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |