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STM32U535NET3QTR Datasheet(PDF) 197 Page - STMicroelectronics

Part # STM32U535NET3QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET3QTR Datasheet(HTML) 197 Page - STMicroelectronics

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DS14217 Rev 1
197/278
STM32U535xx
Electrical characteristics
253
tprog_page One 8-Kbyte page programming time
fAHB = 160 MHz, normal mode
60.2
-
ms
fAHB = 160 MHz, burst mode
24.5
-
tprog_bank One 1-Mbyte bank programming time
fAHB = 160 MHz, normal mode
7710
-
fAHB = 160 MHz, burst mode
3140
-
tERASE One 8-Kbyte page erase time
10 k endurance cycles
1.5
2.4
100 k endurance cycles
1.7
3.4
tME
Mass erase time (one bank)
10 k endurance cycles
49
77
Mass erase time (two banks)
98
154
IDD(3)
Average consumption from VDD
Write mode
2.1
-
mA
Erase mode
1.3
-
Maximum current (peak)
Write mode
2.6
-
Erase mode
3.0
-
1. Specified by design. Not tested in production.
2. Evaluated by characterization after cycling. Not tested in production.
3. Evaluated by characterization. Not tested in production.
Table 85. Flash memory characteristics(1) (continued)
Symbol
Parameter
Conditions
Typ
Max(2)
Unit
Table 86. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NEND Endurance
Whole bank
TA = –40 to 125 °C
100
kcycles
tRET
Data retention
TA = 85 °C after 1 kcycle(2)
30
Years
TA = 105 °C after 1 kcycle(2)
15
TA = 125 °C after 1 kcycle(2)
10
TA = 55 °C after 10 kcycles(2)
30
TA = 85 °C after 10 kcycles(2)
15
TA = 105 °C after 10 kcycles(2)
10
TA = 55 °C after 100 kcycles(2)
30
TA = 85 °C after 100 kcycles(2)
15
TA = 105 °C after 100 kcycles(2)
10
1. Evaluated by characterization. Not tested in production.
2. Cycling performed over the whole temperature range.



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