S71GS256 datasheet(103/195 Pages) SPANSION

103 / 195 page

October 4, 2004 cellRAM_00_A0

CellularRAM Type 2

103

Ad vance

Info rmat i o n

CellularRAM Type 2

128/64/32 Megabit

Burst CellularRAM

Features

Single device supports asynchronous, page, and burst operations

VCC Voltages

— 1.70V–1.95V VCC

Random Access Time: 70ns

Burst Mode Write Access

—Continuous burst

Burst Mode Read Access

— 4, 8, or 16 words, or continuous burst

Page Mode Read Access

— Sixteen-word page size

— Interpage read access: 70ns

— Intrapage read access: 20ns

Low Power Consumption

— Asynchronous READ < 25mA

— Intrapage READ < 15mA

— Initial access, burst READ < 35mA

— Continuous burst READ < 11mA

— Standby: 180µA

— Deep power-down < 10µA

Low-Power Features

— Temperature Compensated Refresh (TCR) On-chip sensor control

— Partial Array Refresh (PAR)

— Deep Power-Down (DPD) Mode

General Description

CellularRAM™ products are high-speed, CMOS dynamic random access memories

developed for low-power, portable applications. These devices include an industry

standard burst mode Flash interface that dramatically increases read/write band-

width compared with other low-power SRAM or Pseudo SRAM offerings.

To operate smoothly on a burst Flash bus, CellularRAM products incorporate a

transparent self-refresh mechanism. The hidden refresh requires no additional

support from the system memory controller and has no significant impact on de-

vice read/write performance.

Two user-accessible control registers define device operation. The bus configura-

tion register (BCR) defines how the CellularRAM device interacts with the system

memory bus and is nearly identical to its counterpart on burst mode Flash de-

vices. The refresh configuration register (RCR) is used to control how refresh is

performed on the DRAM array. These registers are automatically loaded with de-

fault settings during power-up and can be updated anytime during normal

operation.

Special attention has been focused on standby current consumption during self

refresh. CellularRAM products include three mechanisms to minimize standby

current. Partial array refresh (PAR) enables the system to limit refresh to only

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