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AM29BDS643G Datasheet(PDF) 16 Page - Advanced Micro Devices |
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AM29BDS643G Datasheet(HTML) 16 Page - Advanced Micro Devices |
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16 / 49 page  14 Am29BDS643G 25692A2 May 8, 2006 D A TA SH EE T Table 4. System Interface String Table 5. Device Geometry Definition Addresses Data Description 1Bh 0017h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 0019h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) Refer to 4Dh. 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) Refer to 4Eh. 1Fh 0003h Typical timeout per single byte/word write 2N µs 20h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 0008h Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0005h Max. timeout for byte/word write 2N times typical 24h 0000h Max. timeout for buffer write 2N times typical 25h 0004h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Addresses Data Description 27h 0017h Device Size = 2N byte 28h 29h 0001h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of bytes in multi-byte write = 2N (00h = not supported) 2Ch 0004h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 005Eh 0000h 0000h 0001h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 0003h 0000h 0040h 0000h Erase Block Region 2 Information 35h 36h 37h 38h 001Eh 0000h 0000h 0001h Erase Block Region 3 Information 39h 3Ah 3Bh 3Ch 0003h 0000h 0040h 0000h Erase Block Region 4 Information |
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