AM29BDS643G datasheet(47/49 Pages) AMD

47 / 49 page

May 8, 2006 25692A2

Am29BDS643G

D A TA

SH EE T

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 1.8 V V

CC, 1 million cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 1.8 V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed.

4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Table 10 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1 million cycles.

DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

32 Kword

0.4

Excludes 00h programming

prior to erasure (Note 4)

8 Kword

0.4

Chip Erase Time

Word Programming Time

11.5

210

µs

Excludes system level

overhead (Note 5)

Accelerated Word Programming Time

120

µs

Chip Programming Time (Note 3)

144

Excludes system level

overhead (Note 5)

Accelerated Chip Programming Time

Parameter

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C10

Years

125

°C20

Years

AM29BDS643G Datasheet(PDF) 47 Page - Advanced Micro Devices

AM29BDS643G Datasheet(HTML) 47 Page - Advanced Micro Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

Datasheet Download

Link URL