RF112 datasheet(33/45 Pages) NXP

33 / 45 page

Table 7. Frequency generation specification (continued)

Parameter

Conditions

Min

Typ

Max

Unit

RO2, fLO ± N x 40

MHz

-60

dBc

RO2, fLO ± N x

160 MHz

-60

dBc

PLL settling time

In-band frequency

hop

fLO within 10 kHz

of final frequency

µs

Channel switching

time

Any frequencies

over the tuning

range, inclusive of

all programming,

calibrations.

600

µs

Turnaround time

TX to RX:

Includes time to

load Rx gain state

µs

RX to TX:

Includes time to

load Tx gain state

µs

XO Crystal Oscillator Specifications

XO frequency tuning

range

Typical crystal

load capacitance

± 40

ppm

XO frequency

resolution

T ypical crystal

and typical load

capacitance

Static setting of

fine tuning cap

bank

±0.1

ppm

160MHz_DIFF_IO signal characteristics as an output

160MHz_DIFF_IO

output frequency

160

MHz

160MHz_DIFF_IO

output clock jitter

Integrated from

10kHz to 80MHz

160MHz_DIFF_IO

output duty cycle

160MHz_DIFF_IO

differential output

voltage level (LVDS)

200

mV (VPP_DIFF(1,2))

160MHz_DIFF_IO

output common

mode voltage level

(LVDS)

0.467

V1,2

Notes:

1- The LVDS_160MHz_IO measurment is to be taken based on 100 Ohms terminating load impedance as in the figure below

Electrical characteristics

RF112 Transceiver Data Sheet, Rev. 1 Draft B, 05/2024

NXP Semiconductors

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