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AD5142ABCPZ10-RL7 Datasheet(PDF) 5 Page - Analog Devices

Part # AD5142ABCPZ10-RL7
Description  Dual Channel, 128-/256-Position, I2C, Nonvolatile Digital Potentiometer
PDF  29 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD5142ABCPZ10-RL7 Datasheet(HTML) 5 Page - Analog Devices

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Data Sheet
AD5122A/AD5142A
SPECIFICATIONS
analog.com
Rev. D | 5 of 29
Table 2. (Continued)
Parameter
Symbol
Test Conditions/Comments
Min
Typ1
Max
Unit
Analog Crosstalk
CTA
−90
dB
Endurance10
TA = 25°C
1
Mcycles
100
kcycles
Data Retention11, 12
50
Years
1 Typical values represent average readings at 25°C, VDD = 5 V, VSS = 0 V, and VLOGIC = 5 V.
2 Resistor integral nonlinearity (R-INL) error is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions.
R-DNL measures the relative step change from ideal between successive tap positions. The maximum wiper current is limited to (0.7 × VDD)/RAB.
3 Guaranteed by design and characterization, not subject to production test.
4 INL and DNL are measured at VWB with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = 0 V. DNL specification limits of
±1 LSB maximum are guaranteed monotonic operating conditions.
5 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground
referenced bipolar signal adjustment.
6 Different from operating current; supply current for EEPROM program lasts approximately 30 ms.
7 Different from operating current; supply current for EEPROM read lasts approximately 20 µs.
8 PDISS is calculated from (IDD × VDD) + (ILOGIC × VLOGIC).
9 All dynamic characteristics use VDD/VSS = ±2.5 V, and VLOGIC = 2.5 V.
10 Endurance is qualified to 100,000 cycles per JEDEC Standard 22, Method A117 and measured at −40°C to +125°C.
11 Retention lifetime equivalent at junction temperature (TJ) = 125°C per JEDEC Standard 22, Method A117. Retention lifetime, based on an activation energy of 1 eV, derates
with junction temperature in the Flash/EE memory.
12 50 years apply to an endurance of 1000 cycles. An endurance of 100,000 cycles has an equivalent retention lifetime of 5 years.
ELECTRICAL CHARACTERISTICS—AD5142A
VDD = 2.3 V to 5.5 V, VSS = 0 V; VDD = 2.25 V to 2.75 V, VSS = −2.25 V to −2.75 V; VLOGIC = 1.8 V to 5.5 V, −40°C < TA < +125°C, unless
otherwise noted.
Table 3.
Parameter
Symbol
Test Conditions/Comments
Min
Typ1
Max
Unit
DC CHARACTERISTICS—RHEOSTAT MODE (ALL
RDACs)
Resolution
N
8
Bits
Resistor Integral Nonlinearity2
R-INL
RAB = 10 kΩ
VDD ≥ 2.7 V
−2
±0.2
+2
LSB
VDD < 2.7 V
−5
±1.5
+5
LSB
RAB = 100 kΩ
VDD ≥ 2.7 V
−1
±0.1
+1
LSB
VDD < 2.7 V
−2
±0.5
+2
LSB
Resistor Differential Nonlinearity2
R-DNL
−0.5
±0.2
+0.5
LSB
Nominal Resistor Tolerance
ΔRAB/RAB
−8
±1
+8
%
Resistance Temperature Coefficient3
(ΔRAB/RAB)/ΔT × 106
Code = full scale
35
ppm/°C
Wiper Resistance3
RW
Code = zero scale
RAB = 10 kΩ
55
125
RAB = 100 kΩ
130
400
Bottom Scale or Top Scale
RBS or RTS
RAB = 10 kΩ
40
80
RAB = 100 kΩ
60
230
Nominal Resistance Match
RAB1/RAB2
Code = full scale
−1
±0.2
+1
%



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