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GD75PIX170C6S Datasheet(PDF) 3 Page - StarPower Europe AG |
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GD75PIX170C6S Datasheet(HTML) 3 Page - StarPower Europe AG |
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3 / 13 page ![]() GD75PIX170C6S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 10/19/2018 3/13 Preliminary IGBT-inverter Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=75A,VGE=15V, Tj=25 oC 1.85 2.20 V IC=75A,VGE=15V, Tj=125 oC 2.25 IC=75A,VGE=15V, Tj=150 oC 2.35 VGE(th) Gate-Emitter Threshold Voltage IC=3.0mA,VCE=VGE, Tj=25 oC 5.6 6.2 6.8 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 5.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance 8.5 Ω Cies Input Capacitance VCE=25V,f=1MHz, VGE=0V 9.03 nF Cres Reverse Transfer Capacitance 0.22 nF QG Gate Charge VGE=-15…+15V 0.71 μC td(on) Turn-On Delay Time VCC=900V,IC=75A, RG=6.8 Ω,V GE=±15V, Tj=25 oC 215 ns tr Rise Time 38 ns td(off) Turn-Off Delay Time 391 ns tf Fall Time 100 ns Eon Turn-On Switching Loss 15.7 mJ Eoff Turn-Off Switching Loss 16.7 mJ td(on) Turn-On Delay Time VCC=900V,IC=75A, RG=6.8 Ω,V GE=±15V, Tj=125 oC 220 ns tr Rise Time 44 ns td(off) Turn-Off Delay Time 495 ns tf Fall Time 184 ns Eon Turn-On Switching Loss 23.5 mJ Eoff Turn-Off Switching Loss 27.5 mJ td(on) Turn-On Delay Time VCC=900V,IC=75A, RG=6.8 Ω,V GE=±15V, Tj=150 oC 229 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 512 ns tf Fall Time 192 ns Eon Turn-On Switching Loss 25.6 mJ Eoff Turn-Off Switching Loss 29.9 mJ ISC SC Data tP ≤10μs,V GE=15V, Tj=150 oC,V CC=1000V, VCEM ≤1700V 300 A |
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