| Electronic Components Datasheet Search |
|
MSC8144EC Datasheet(PDF) 29 Page - Freescale Semiconductor, Inc |
|
|
|||||||||||||||||||||||||||||
MSC8144EC Datasheet(HTML) 29 Page - Freescale Semiconductor, Inc |
|
29 / 80 page ![]() Electrical Characteristics MSC8144EC Quad Core Digital Signal Processor Data Sheet, Rev. 6 Freescale Semiconductor 29 all four cores. It was created using CodeWarrior® 3.0. These values are provided as examples only. Power consumption is application dependent and varies widely. To assure proper board design with regard to thermal dissipation and maintaining proper operating temperatures, evaluate power consumption for your application and use the design guidelines in Section 3 of this document. At allowable voltage levels, Table 7 lists the estimated power dissipation on the 1.0-V AVDD supplies for the MSC8144EC PLLs. 2.6 DC Electrical Characteristics This section describes the DC electrical characteristics for the MSC8144EC. 2.6.1 DDR SDRAM DC Electrical Characteristics This section describes the DC electrical specifications for the DDR SDRAM interface of the MSC8144EC. Note: DDR SDRAM uses VDDDDR(typ) = 2.5 V and DDR2 SDRAM uses VDDDDR(typ) = 1.8 V. 2.6.1.1 DDR2 (1.8 V) SDRAM DC Electrical Characteristics Table 8 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the MSC8144EC when VDDDDR(typ) = 1.8 V. Table 7. MSC8144EC PLLs Power Dissipation PLL supply Typical Maximum Unit VDDPLL0 TBD 10 mW VDDPLL1 TBD 10 mW VDDPLL2 TBD 10 mW Note: Typical value is based on VDDPLLX = 1.0 V, TA = 70°C, TJ = 105°C. Table 8. DDR2 SDRAM DC Electrical Characteristics for VDDDDR (typ) = 1.8 V Parameter/Condition Symbol Min Max Unit I/O supply voltage1 VDDDDR 1.7 1.9 V I/O reference voltage2 MVREF 0.49 × VDDDDR 0.51 × VDDDDR V I/O termination voltage3 VTT MVREF –0.04 MVREF + 0.04 V Input high voltage VIH MVREF + 0.125 VDDDDR +0.3 V Input low voltage VIL –0.3 MVREF – 0.125 V Output leakage current4 IOZ –50 50 μA Output high current (VOUT = 1.420 V) IOH –13.4 — mA Output low current (VOUT = 0.280 V) IOL 13.4 — mA Notes: 1. VDDDDR is expected to be within 50 mV of the DRAM VDD at all times. 2. MVREF is expected to be equal to 0.5 × VDDDDR, and to track VDDDDR DC variations as measured at the receiver. Peak-to-peak noise on MVREF may not exceed ±2% of the DC value. 3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal to MVREF. This rail should track variations in the DC level of VDDDDR. 4. Output leakage is measured with all outputs are disabled, 0 V ≤ V OUT ≤ V DDDDR. |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |