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STM32L496QGI3 Datasheet(PDF) 139 Page - STMicroelectronics |
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STM32L496QGI3 Datasheet(HTML) 139 Page - STMicroelectronics |
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139 / 262 page  IDD_ALL (Standby with RTC) Supply current in Standby mode (backup registers retained), RTC enabled RTC clocked by LSE bypassed at 32768Hz 1.8 V 308 504 1483 3793 9883 - - - - - nA 2.4 V 400 633 1763 4457 11483 - - - - - 3 V 508 779 2119 5325 13730 - - - - - 3.6 V 661 1009 2625 6427 16140 - - - - - RTC clocked by LSE quartz (3) in low drive mode 1.8 V 426 624 1679 4244 10884 - - - - - 2.4 V 521 751 1985 4952 12619 - - - - - 3 V 643 914 2371 5931 15121 - - - - - 3.6 V 819 1162 2914 7019 17551 - - - - - IDD_ALL (SRAM2)(4) Supply current to be added in Standby mode when SRAM2 is retained - 1.8 V 371 1111 4297 10153 22747 - - - - - nA 2.4 V 372 1112 4328 10154 22888 - - - - - 3 V 374 1116 4403 10429 23711 - - - - - 3.6 V 378 1149 4545 10702 24361 - - - - - IDD_ALL (wakeup from Standby) Supply current during wakeup from Standby mode Wakeup clock is MSI = 4 MHz. See (5). 3 V 1.4 - - - - - - - - - mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Guaranteed by test in production. 3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 4. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: I IDD_ALL(Standby + RTC) + IDD_ALL(SRAM2). 5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 51: Low-power mode wakeup timings. Table 47. Current consumption in Standby mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit -VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C |
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