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STM32L496QGI3 Datasheet(PDF) 161 Page - STMicroelectronics |
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STM32L496QGI3 Datasheet(HTML) 161 Page - STMicroelectronics |
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161 / 262 page ![]() DocID029173 Rev 1 161/262 STM32L496xx Electrical characteristics 235 IDD Average consumption from VDD Write mode 3.4 - mA Erase mode 3.4 - Maximum current (peak) Write mode 7 (for 2 μs) - Erase mode 7 (for 41 μs) - 1. Guaranteed by design. Table 64. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) 1. Guaranteed by characterization results. Unit NEND Endurance TA = –40 to +105 °C 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 15 1 kcycle(2) at TA = 125 °C 7 10 kcycles(2) at TA = 55 °C 30 10 kcycles(2) at TA = 85 °C 15 10 kcycles(2) at TA = 105 °C 10 Table 63. Flash memory characteristics(1) (continued) Symbol Parameter Conditions Typ Max Unit |
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