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STM32L496QGI3 Datasheet(PDF) 218 Page - STMicroelectronics |
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STM32L496QGI3 Datasheet(HTML) 218 Page - STMicroelectronics |
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218 / 262 page  Electrical characteristics STM32L496xx 218/262 DocID029173 Rev 1 Figure 44. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms Table 104. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2) 1. CL = 30 pF. 2. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 3THCLK-1 3THCLK+1 ns tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK-1 THCLK+1 tw(NWE) FMC_NWE low time THCLK-1.5 THCLK+ 0.5 th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK - tv(A_NE) FMC_NEx low to FMC_A valid - 0 th(A_NWE) Address hold time after FMC_NWE high THCLK-0.5 - tv(BL_NE) FMC_NEx low to FMC_BL valid - 0.5 th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK-0.5 - tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK+3 th(Data_NWE) Data hold time after FMC_NWE high THCLK+0.5 - tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0 tw(NADV) FMC_NADV low time - THCLK+1 |
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