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STM32U073RCT6 Datasheet(PDF) 79 Page - STMicroelectronics |
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STM32U073RCT6 Datasheet(HTML) 79 Page - STMicroelectronics |
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79 / 146 page  Symbol Parameter Conditions Min Typ Max Unit DPLL_IN PLL input clock duty cycle - 45 - 55 % fPLL_P_OUT PLL multiplier output clock P Voltage scaling Range 1 3.09 - 122 MHz Voltage scaling Range 2 3.09 - 40 fPLL_Q_OUT PLL multiplier output clock Q Voltage scaling Range 1 12 - 128 MHz Voltage scaling Range 2 12 - 33 fPLL_R_OUT PLL multiplier output clock R Voltage scaling Range 1 12 - 64 MHz Voltage scaling Range 2 12 - 16 fVCO_OUT PLL VCO output Voltage scaling Range 1 96 - 344 MHz Voltage scaling Range 2 96 - 128 tLOCK PLL lock time - - 15 40 μs Jitter RMS cycle-to-cycle jitter System clock 56 MHz - 50 - ±ps RMS period jitter - 40 - IDD(PLL) PLL power consumption on VDDnot found VCO freq = 96 MHz - 200 260 μA VCO freq = 192 MHz - 300 380 VCO freq = 344 MHz - 520 650 1. Make sure to use the appropriate division factor M to obtain the specified PLL input clock values. 6.3.10 Flash memory characteristics Table 57. Flash memory characteristics Specified by design, not tested in production. Symbol Parameter Conditions Typ Max Unit tprog 64 ‑bit programming time - 85 125 µs Burst mode 48 48 tprog_row Row (32 double word) programming time Normal programming 2.7 4.6 ms Fast programming 1.7 2.8 tprog_page Page (2 Kbytes) programming time Normal programming 21.8 36.6 Fast programming 13.7 22.4 tERASE Page (2 Kbytes) erase time - 22.0 40.0 tprog_bank One 256-Kbyte bank programming time(1) Normal programming 1.4 2.4 s Fast programming 0.9 1.5 tME Mass erase time - 22.1 40.1 ms IDD(Flash A) Average consumption from VDD Programming 3 - mA Page erase 3 - Mass erase 5 IDD(Flash P) Maximum current (peak) Programming, 2 μs peak duration 7 - Erase, 41 μs peak duration 7 - 1. The values provided also apply to devices with less flash memory than one 256-Kbyte bank. STM32U073x8/B/C Electrical characteristics DS14548 - Rev 2 page 79/146 |
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