LM5145 datasheet(2/60 Pages) TI2

2 / 60 page

Several features are included to simplify compliance with CISPR 11 or 32 EMI requirements. Adaptively timed,

high-current MOSFET gate drivers minimize body diode conduction during switching transitions, reducing

switching losses while also improving thermal and EMI performance at high input voltage and high switching

frequency. Resistor-adjustable switching frequency as high as 3.2MHz can be synchronized to an external clock

source to eliminate beat frequencies in noise-sensitive applications.

To further improves the EMI signature, the LM25139 controller has a unique feature known as dual

random spread spectrum (DRSS). Combining low-frequency triangular and high-frequency random modulations

mitigates EMI disturbances across lower and higher frequency bands, respectively. This hybrid technique aligns

with the multiple resolution bandwidth (RBW) settings specified in industry-standard EMC tests.

Additional features of the LM25139 include –40°C to 150°C junction temperature operation, user-selectable PFM

mode for lower current consumption at light-load conditions, open-drain power-good indicator for fault reporting

and output monitoring, precision enable input, monotonic start-up into prebiased load, integrated VCC bias

supply regulator and bootstrap diode, internal 3ms soft-start time, hiccup-mode overload protection, and thermal

shutdown protection with automatic recovery.

The LM25139 controller is qualified to AEC-Q100 grade 1 for automotive applications. The wide input

voltage range, low quiescent current consumption, high-temperature operation, low minimum on-time, low EMI

signature, low component count, and 9mm2 IC size provide an excellent point-of-load regulator choice for

applications requiring enhanced robustness and cost advantages.

LM25139

SLVSJ80 – OCTOBER 2025

www.ti.com

Submit Document Feedback

Product Folder Links: LM25139

LM5145 Datasheet(PDF) 2 Page - Texas Instruments