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L6238S Datasheet(PDF) 20 Page - STMicroelectronics |
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L6238S Datasheet(HTML) 20 Page - STMicroelectronics |
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20 / 31 page ![]() given application is too slow. Figure 4-9 is an os- cillograph taken on a device that had a fairly large value for Rslew and failed to spin up and phase lock a motor. The problem manifests itself as the motor begins to spin up. At lower RPMs, the Bemf of the motor is relatively small resulting in higher amounts of commutation current. In figure 4-9, the upper waveform is the voltage appearing at OUTPUT relative to the CENTER TAP input. The lower waveform is the actual output of the Bemf ampli- fier available on special engineering prototypes. The oscillograph was taken just as the problem occured. The period between zero crossings was ~800 µs resulting in a mask time period of 200µs. As can be seen, the excessively long slew rate actually exceeded the mask period and was de- tected as a zero crossing. This resulted in improper sequencing of the out- puts relative to the proper phases and caused the motor to spin down. 4.7 Ext PFET Driver The power handling capabilities of the 3 phase output stage can be extended with the addition of a single P-Channel FET. Figure 4-10 shows the Ext FET connection and demonstrates how the L6238S automatically senses the FETs presence. When the voltage at the Gate Drive pin is ≥ 0.7V, the output of com- parator A3 goes high, removing the variable drive A1 from the internal FETs and connects them in- stead to Vanalog via the commutation switches to facilitate full conduction. The upper FETs drive paths are not shown for clarity. A3 also closes SW2 allowing A1 to linearly drive the external P-Channel FET Q1 via inverter A2. 4.8 Bemf Ampolifier Since no Hall Effect Sensors are required, the commutation information is derived from the Bemf voltage zero-crossings of the undriven phase with respect to the center tap. The Bemf comparator and associated signal levels are depicted in figure 4-11. For reliable operation, the Bemf signal am- plitude should be a minimum of ± 60 mV to be properly detected. In order to provide for noise immunity, internal hysteresis is incorporated in the detection circuitry to prevent false zero cross- ing detection. For laboratory evaluation purposes, a simple re- Figure 4-10: External P-Fet. L6238S 20/31 |
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