Data Sheet

© 2026 Microchip Technology Inc. and its subsidiaries

DS00004351B - 1

Product Overview

MMA142PP5 is a 1 GHz – 30 GHz Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC)

pseudomorphic High-Electron Mobility Transistor (pHEMT), plastic packaged amplifier. Nominally, self-biased at

6V and 70 mA, the amplifier provides a 1 dB positive gain slope with a typical gain of 14 dB, 3 dB noise figure,

17 dBm P1dB, and 29 dBm OIP3 at 18 GHz. Bias is supplied through an on-chip bias choke and the RF I/O’s are

nominally matched to 50Ω, allowing for ease of integration and making it ideal for use in narrow or wide-band,

test instrumentation, new aerospace, defense, and space applications.

Key Features

•

Frequency range: 1 GHz to 30 GHz

•

Gain: 14 dB with + 1 dB slope

•

Low noise figure: 3 dB at 18 GHz

•

High OIP3: +29 dBm at 18 GHz

•

Single supply: self-biased at +6V at 70 mA

•

50Ω matched input/output

•

Plastic QFN 5 mm × 5 mm package

Amplifier Functional Diagram

7

8

9

10 11 12 13 14 15 16

17

18

19

20

21

22

23

24

1

2

3

4

5

6

RFIN

RFOUT

MMA142PP5

PACKAGE

BASE

GND

25

32

31 30 29 28 27 26

Applications

•

Wide-band microwave radios

•

Test and measurement instrumentation

•

Electronic warfare (EW), electronic countermeasures(ECM), and

electronic counter-countermeasures (ECCM)

•

Aerospace, Defense, and Space

•

Telecom infrastructure

•

Microwave and millimeter-wave communication systems

Overall Performance

Parameter

Typ.

Units

Frequency range

1 – 30

GHz

Gain

14

dB

NF at 18 GHz

3

dB

P1dB at 18 GHz

+17

dBm

OIP3 at 18 GHz

+29

dBm

Current at +6V supply

70

mA

Export Classification: EAR99

Performance Curves

0

10

20

30

0

5

10

15

20

25

30

35

0

5

10

15

20

25

30

Frequency (GHz)

P1dB, dBm

NF, dB

OIP3, dBm

S21, dB

1 GHz – 30 GHz GaAs Single-Supply MMIC Broadband

Driver Amplifier in Plastic Package

MMA142PP5