MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3

Part Nomenclature

 Data Sheet

© 2013-2026 Microchip Technology Inc. and its subsidiaries

DS00005170C - 4

2.

Part Nomenclature

Figure 2-1. Part Nomenclature

2.1.

Symbols and Definitions

Table 2-1. Symbols and Definitions

Symbol

Definition

αV(BR)

Temperature coefficient of breakdown voltage: The change in breakdown voltage divided by the change in

temperature that caused it expressed in %/°C or mV/°C.

CT

Total capacitance: The total small signal capacitance between the diode terminals of a complete device.

I(BR)

Breakdown current: The current used for measuring Breakdown Voltage V(BR).

ID

Standby current: The current through the device at working standoff voltage.

IIB

Inverse blocking leakage current: The current through a unidirectional-blocking low capacitance device at

working inverse blacking voltage (VWIB)

IPP

Peak impulse current: The peak current during an impulse.

PPP

Peak pulse power: The peak power that can be applied for a specific pulse width and waveform. The product

of IPP and VC.

V(BR)

Breakdown voltage: The voltage across the device at a specified current I(BR) in the breakdown region.

VC

Clamping voltage: The voltage across the device in a region of low differential resistance during the

application of an impulse current (IPP) for a specified waveform.

VPIB

Peak inverse blocking voltage: Minimum breakdown voltage of the series low capacitance rectifier.

VWIB

Working inverse blocking voltage: The maximum-rated value of dc or peak blocking voltage that may be

applied to a unidirectional-blocking low-capacitance diode in the inverse direction. Above this rated voltage,

the diode is not to be surge or impulse tested for any reason.

VWM

Working standoff voltage: The maximum-rated value of DC or repetitive peak positive cathode-to-anode

voltage that may be continuously applied over the standard operating temperature.