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MXLSMCGLCE170AE3 Datasheet(PDF) 6 Page - Microchip Technology |
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MXLSMCGLCE170AE3 Datasheet(HTML) 6 Page - Microchip Technology |
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6 / 13 page ![]() MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Electrical Characteristics Data Sheet © 2013-2026 Microchip Technology Inc. and its subsidiaries DS00005170C - 6 Table 3-1. Electrical Characteristics at 25 °C Unless Otherwise Stated (continued) Part Number Working Standoff Voltage VWM Volts Breakdown Voltage V(BR) at I(BR) Volts Maximum Standby Current at VWM ID μA Maximum Clamping Voltage at IPP VC Volts Maximum Peak Pulse Current IPP at 10/1000 Amps Working Inverse Blocking Voltage VWIB Volts Peak Inverse Blocking Voltage VPIB Volts Min. Max. mA MSMCxLCE100A MSMCxLCE110A 100 110 111 122 123 135 1 1 5 5 162 178 9.3 8.4 300 300 200 400 MSMCxLCE120A MSMCxLCE130A 120 130 133 144 147 159 1 1 5 5 193 209 7.8 7.2 300 300 400 400 MSMCxLCE150A MSMCxLCE160A 150 160 167 178 185 197 1 1 5 5 243 259 6.2 5.8 300 300 400 400 MSMCxLCE170A 170 189 209 1 5 275 5.4 300 400 Notes: 1. Normal selection criteria for TVS devices is by working standoff voltage (VWM) and should be equal or greater than DC or continuous peak operating voltage. 2. TVS devices are tested to maximum peak pulse current (IPP) with clamping voltage monitored. This surge capability is one of the most significant electrical characteristics of the device and should be considered as part of customer quality inspections. Test in TVS avalanche direction. Do not pulse in “forward” direction. See Application Schematics. 3. Maximum capacitance of MLCE series at 0 Volts: – is 100 pF for VWM 6.5 to 58V – is 90 pF for VWM 60 to 170V 4. VWIB is at Inverse Blocking Leakage Current (IIB) of 10 µA. |
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