M58LW064 datasheet(25/53 Pages) STMICROELECTRONICS

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M58LW064A, M58LW064B

Table 16. CFI - Device Voltage and Timing Specification

Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volt and bit3 to bit0 in mV.

2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.

3. Not supported.

4. For M58LW064B, A1 = Don’t Care.

Table 17. Device Geometry Definition

Note: 1. For M58LW064B, A1 = Don’t Care.

Address (4)

A22-A1 (M58LW064A)

A22-A2 (M58LW064B)

Data

Instruction

1Bh

27h (1)

VCC Min, 2.7V

1Ch

36h (1)

VCC max, 3.6V

1Dh

00h (2)

VPP min – Not Available

1Eh

00h (2)

VPP max – Not Available

1Fh

00h (3)

2N ms Word, DWord prog. typical time-out

20h

x07h

2N ms, typical time out for max buffer write

21h

0Ah

2N ms, Erase Block typical time-out

22h

00h (3)

2N ms, chip erase time-out typ. – Not Available

23h

00h (3)

2N times typ. for Word Dword time-out max – Not Available

24h

04h

2N times typ. for buffer write time-out max

25h

04h

2N x typ. individual block erase time-out maximum

26h

00h (3)

2N times typ. for chip erase max time-out – Not Available

Address (1)

A22-A1 (M58LW064A)

A22-A2 (M58LW064B)

Data

Instruction

27h

17h

2N nb. of bytes device Size

28h

01h.

Device Interface Sync./Async.

29h

00h

Organisation Sync./Async.

2Ah

05h

Page size in bytes, 2N

2Bh

00h

2Ch

01h

Bit7-0 = nb of Erase Block region

2Dh

3Fh

Number (N-1) of Erase Blocks of identical size; N=64

2Eh

00h

2Fh

00h

x times 256 bytes per Erase block (128K bytes)

30h

02h

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