M58LW064 datasheet(28/53 Pages) STMICROELECTRONICS

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M58LW064A, M58LW064B

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Table 22. DC Characteristics

(TA = 0 to 70°C, –40 to 85°C, VDD = 2.7V to 3.6V)

Note: 1. Sampled only, not 100% tested.

2. Biasing RP pin to VHH is allowed for a maximum cumulative period of 80 hours.

3. Current increases to ICC +ICC5 during a read operation.

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VDDQ

±1

µA

ILO

Output Leakage Current

≤ VOUT ≤VDDQ

±5

µA

ICC

Supply Current (Random Read)

E=VIL,G = VIH,fadd = 6MHz

ICCB

Supply Current (Burst Read)

E= VIL,G= VIH,fclock = 50MHz

ICC1

Supply Current (Standby)

E= VDD ± 0.2V,

RP = VDD ± 0.2V

Supply Current (Auto Low-Power)

ICC2

Supply Current (Reset/Power-down)

RP = VSS ± 0.2V

µA

ICC3

(1)

Supply Current (Program or Erase,

Set Lock Bit, Erase Lock Bit)

Write to Buffer and program

Block Erase in progress

ICC4

Supply Current

(Erase/Program Suspend)

E= VIH

µA

VIL

Input Low Voltage

–0.5

0.4

VIH

Input High Voltage

VDDQ –0.4

VDDQ + 0.3

VOL

Output Low Voltage

IOL = 100µA

0.1

VOH

Output High Voltage CMOS

IOH = –100µAVDDQ –0.1

VHH

(2)

RP Hardware Block Unlock Voltage

Block Erase in progress,

Write to Buffer and Program

8.5

9.5

VLKO

VDD Supply Voltage (Erase and

Program lockout)

2.2

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