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DIO60011ASH3 Datasheet(PDF) 6 Page - DIOO MICROCIRCUITS CO., LTD |
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DIO60011ASH3 Datasheet(HTML) 6 Page - DIOO MICROCIRCUITS CO., LTD |
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6 / 17 page ![]() DIO60011/A Version 1.2, Jun 2025 www.dioo.com © 2025 Dioo Microcircuits Co., Ltd. Jiangsu 3 5. Electrical Characteristics The values are obtained under these conditions unless otherwise specified: VIN = 5 V, VOUT = 1.8 V, L = 1 µH, COUT = 10 µF, TA = 25°C. Symbol Parameter Test Conditions Min Typ Max Unit VIN Input voltage range 2.5 5.5 V IQ Quiescent current IOUT = 0, FB = 0.65 V PWM devices 25 µA IOUT = 0, FB = 0.65 V FPWM devices 180 µA ISHDN Shutdown current EN = 0 0.1 1 µA VREF Feedback reference voltage 0.588 0.6 0.612 V RDS(ON),P PFET RON IOUT = 100 mA 260 mΩ RDS(ON),N NFET RON IOUT = 100 mA 180 mΩ ILIM PFET current limit 2 A VENH EN rising threshold 1 V VENL EN falling threshold 0.4 V VUVLO Input undervoltage lockout threshold 2.15 2.45 V VHYS undervoltage lockout hysteresis 0.15 V fSW Switching frequency IOUT = 500 mA 1.65 MHz Min ON time 80 ns Max Duty cycle 100 % tSS Soft-start time VOUT rise from 10% to 90% 0.5 ms TSD Thermal shutdown temperature 150 °C THYS Thermal shutdown hysteresis 20 °C Note: (1) Specifications subject to change without notice. |
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