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RZ/G2N Datasheet(PDF) 109 Page - Renesas Technology Corp |
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RZ/G2N Datasheet(HTML) 109 Page - Renesas Technology Corp |
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109 / 169 page  RZ/G Series, 2nd Generation Datasheet Section 3. Electrical Characteristics R01DS0483EJ0101 Rev.1.01 Page 109 of 169 Jun 30, 2025 Table 3.16.6 Sideband pins timing specification Conditions: VDDQ33 = 3.3 ± 0.2 V [RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N], VDDQ25_AVB0 = 2.5 ± 0.2 V/3.3 ± 0.3 V [RZ/G2E], Tc = -40 to +115 °C [RZ/G2H, RZ/G2M V1.3], Ta = -40 to +85 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], Tj = -40 to +115 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], GND = VSS = 0 V, CL = 30 pF Item Symbol Min. Typ. Max. Unit Figures AVB_MDIO input pulse width PWidth_side 2 — — Cycle* Figure 3.16.10 AVB_PHY_INT input pulse width PWidth_side 2 — — Cycle* AVB_LINK input pulse width PWidth_side 2 — — Cycle* Note: * 1 cycle = HPϕ cycle. Figure 3.16.10 Sideband signals input Timing Note: About AVB_MDC, in case of connecting to a device that does not have a built-in pull resistor, should add pull register at external. AVB_MDIO AVB_PHY_INT AVB_LINK PWidth_side PWidth_side |
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