SIM6892MS datasheet(9/55 Pages) SANKEN

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SIM689xM Series

SIM689xM-DSE Rev.3.4

SANKEN ELECTRIC CO., LTD.

Mar. 05, 2024

https://www.sanken-ele.co.jp/en

3.4

Transistor Characteristics

Figure 3-2 provides the definitions of switching characteristics described in this and the following sections. The

SIM6891MD, SIM6891MDN, and SIM6893M are ICs having built-in power MOSFETs; the SIM6892M, SIM6895M,

and SIM6896M are ICs incorporating IGBTs and freewheeling diodes.

HINx/

LINx

ID / IC

10%

VDS /

VCE

td(on)

90%

ton

trr

td(off) tf

toff

Figure 3-2.

Switching Characteristics Definitions

3.4.1

SIM6891MD

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-to-Source Leakage Current

IDSS

VDS = 600 V, VIN = 0 V

—

100

µA

Drain-to-Source On-resistance

RDS(ON)

ID = 1.25 A, VIN = 5 V

—

2.0

2.5

Source-to-Drain Diode Forward

Voltage

VSD

ISD = 1.25 A, VIN = 0 V

—

1.0

1.5

High-side Switching

Source-to-Drain Diode Reverse

Recovery Time

trr

VDC = 300 V, ID = 1.25 A,

VIN = 0→5 V or 5→0 V,

TJ = 25 °C,

inductive load

—

100

—

Turn-on Delay Time

td(ON)

—

425

—

Rise Time

—

Turn-off Delay Time

td(OFF)

—

350

—

Fall Time

—

Low-side Switching

Source-to-Drain Diode Reverse

Recovery Time

trr

VDC = 300 V, ID = 1.25 A,

VIN = 0→5 V or 5→0 V,

TJ = 25 °C,

inductive load

—

100

—

Turn-on Delay Time

td(ON)

—

425

—

Rise Time

—

Turn-off Delay Time

td(OFF)

—

365

—

Fall Time

—

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