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SIM6892MS Datasheet(PDF) 29 Page - Sanken electric |
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SIM6892MS Datasheet(HTML) 29 Page - Sanken electric |
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29 / 55 page ![]() SIM689xM Series SIM689xM-DSE Rev.3.4 SANKEN ELECTRIC CO., LTD. 29 Mar. 05, 2024 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2021 Heatsink Thermal silicone grease application area 1.25 1.25 31.3 Unit: mm 7.4 7.4 M2.5 M2.5 Screw hole Screw hole Figure 13-2. Reference Application Area for Thermal Silicone Grease 13.3 Considerations in IC Characteristics Measurement When measuring the breakdown voltage or leakage current of the transistors incorporated in the IC, note that the gate and source (emitter) of each transistor should have the same potential. Moreover, care should be taken during the measurement because each transistor is connected as follows: ● All the high-side drains (collectors) are internally connected to the VBB pin. ● In the U-phase, the high-side source (emitter) and the low-side drain (collector) are internally connected to the U pin. (In the V- and W-phases, the high- and low-side transistors are unconnected inside the IC.) The gates of the high-side transistors are pulled down to the corresponding output (U, V/V1, and W1) pins; similarly, the gates of the low-side transistors are pulled down to the COM2 pin. When measuring the breakdown voltage or leakage current of the transistors, note that all of the output (U, V, and W1), LSx, and COMx pins must be appropriately connected. Otherwise, the switching transistors may result in permanent damage. The following are circuit diagrams representing typical measurement circuits for breakdown voltage: Figure 13-3 shows the high-side transistor (Q1H) in the U-phase; Figure 13-4 shows the low-side transistor (Q1L) in the U-phase. And all the pins that are not represented in these figures are open. When measuring the high-side transistors, leave all the non-measuring pins open. When measuring the low-side transistors, connect only the measuring LSx pin to the COMx pin and leave the other pins open. W2 U COM2 COM1 W1 V1 VBB V2 LS3B LS2 40 LS3A LS2 V LS1 High-side MIC 16 1 2 24 26 33 35 37 19 Q1H Q1L Q2L Q3L Q2H Q3H V 11 6 31 28 Low-side MIC Figure 13-3. Typical Measurement Circuit for High- side Transistor (Q1H) in U-phase W2 U COM2 COM1 W1 V1 VBB V2 LS3B LS2 40 LS3A LS2 V LS1 High-side MIC 16 1 2 24 26 28 33 35 37 19 Q1H Q1L Q2L Q3L Q2H Q3H V 11 6 31 Low-side MIC Figure 13-4. Typical Measurement Circuit for Low- side Transistor (Q1L) in U-phase |
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