JS48F4400PCZ00 datasheet(77/102 Pages) NUMONYX

77 / 102 page

November 2007

Datasheet

Order Number: 290701-18

Numonyx™ Wireless Flash Memory (W18)

13.3

VPP Protection

The Numonyx™ Wireless Flash Memory (W18) provides in-system program and erase

at VPP1. For factory programming, it also includes a low-cost, backward-compatible

12 V programming feature.(Section 11.2, “Factory Programming” on page 60) The EFP

feature can also be used to greatly improve factory program performance as explained

in Section 11.3, “Enhanced Factory Program (EFP)” on page 61.

In addition to the flexible block locking, holding the VPP programming voltage low can

provide absolute hardware write protection of all flash-device blocks. If VPP is below

VPPLK, program or erase operations result in an error displayed in SR[3]. (See

Figure 35.)

Note:

If the VCC supply can sink adequate current, you can use an appropriately valued resistor.

Figure 34: Protection Register Locking

0x84

0x88

0x85

0x81

0x80

PR Lock Register 0

User-Programmable

Intel Factory-Programmed

15 14 13 12 11 10 9

Figure 35: Examples of VPP Power Supply Configurations

• 12 V fast programming

• Absolute write protection with V

PP ≤ VPPLK

System supply

(Note 1)

VCC

VPP

12 V supply

• Low voltage and 12 V fast programming

System supply

12 V supply

• Low-voltage programming

• Absolute write protection via logic signal

System supply

Prot# (logic signal)

• Low-voltage programming

System supply

≤ 10K Ω

VCC

VPP

VCC

VPP

VCC

VPP

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