HMT112R7AFP8C datasheet(21/41 Pages) HYNIX

21 / 41 page

Rev. 0.4 / Jul. 2009

3.5 4GB, 512Mx72 Module(4Rank of x8)-page3

BA[N:0]

A[N:0]

RAS

CAS

CKE0

ODT0

CK0

PAR_IN

CS0 → CS0: SDRAMs U[10:2]

CS1 → CS1: SDRAMs U[19:11]

CS2 → CS2: SDRAMs U[28:20]

ERAS → RAS: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]

CS3 → CS3: SDRAMs U[37:29]

EBA[N:0] → BA[N:0]: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]

WBA[N:0] → BA[N:0]: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]

WRAS → RAS: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]

ECAS → CAS: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]

WCAS → CAS: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]

EWE → WE: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]

WWE → WE: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]

ECKE0 → CKE0: SDRAMs U[10:7], U[28:25]

WCKE0 → CKE0: SDRAMs U[6:2], U[24:20]

EODT0 → ODT0: SDRAMs U[10:7]

WODT0 → ODT0: SDRAMs U[6:2]

PCK1 → CK: SDRAMs U[10:7], U[28:25]

PCK0 → CK: SDRAMs U[6:2], U[15:11]

PCK1 → CK: SDRAMs U[10:7], U[28:25]

PCK0 → CK: SDRAMs U[6:2], U[15:11]

Err_Out

RESET

RST

RST: SDRAMs U[37:2]

1:2

ECKE1 → CKE1: SDRAMs U[19:16], U[37:34]

WCKE1 → CKE1: SDRAMs U[15:11], U[33:29]

ODT1

EODT0 → ODT1: SDRAMs U[28:25]

WODT0 → ODT1: SDRAMs U[24:20]

CKE1

EA[N:0] → A[N:0]: SDRAMs U[10:7], U[19:16], U[28:25], U[37:34]

WA[N:0] → A[N:0]: SDRAMs U[6:2], U[15:11], U[24:20], U[33:29]

PCK3 → CK: SDRAMs U[19:16], U[37:34]

PCK2 → CK: SDRAMs U[24:20], U[33:29]

PCK3 → CK: SDRAMs U[19:16], U[37:34]

PCK2 → CK: SDRAMs U[24:20], U[33:29]

CK1

120Ω

±5%

HMT112R7AFP8C Datasheet(PDF) 21 Page - Hynix Semiconductor

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