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SE97BTP Datasheet(PDF) 2 Page - NXP Semiconductors |
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SE97BTP Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 53 page ![]() SE97B_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 27 January 2010 2 of 53 NXP Semiconductors SE97B DDR memory module temp sensor with integrated SPD 2. Features 2.1 General features JEDEC (JC-42.4) DIMM temperature sensor plus 256-byte serial EEPROM for Serial Presence Detect (SPD) SDA open-drain output design for best operation in distributed multi-point applications Shutdown current: 0.1 μA (typ.) and 5.0 μA (max.) Power-on reset: 1.8 V (typ.) 2-wire interface: I2C-bus/SMBus compatible, 0 Hz to 400 kHz SMBus Alert Response Address and TIMEOUT 25 ms to 35 ms (programmable) ESD protection exceeds 2500 V HBM per JESD22-A114, 250 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101 Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA Available in HWSON8 package 2.2 Temperature sensor features 11-bit ADC Temperature-to-Digital converter with 0.125 °C resolution Voltage range: 3.0 V to 3.6 V Operating current: 250 μA (typ.) and 400 μA (max.) Table 1. Comparison of SE97 versus SE97B features Feature SE97 SE97B JEDEC specification old JEDEC specification new JEDEC specification Bit 8 ‘1’ Thermal Sensor shutdown no SMBus Timeout SMBus Timeout 25 ms to 35 ms Bit 8 ‘0’ Thermal Sensor active SMBus Timeout 25 ms to 35 ms I2C-bus maximum frequency 400 kHz I2C SCL and SDA VIL/VIH voltage levels VIL(max) =0.3 × VDD; VIH(min) =0.7 × VDD Capabilities bit 6 SMBus Timeout set to 0 set to 1 EVENT pin operation frozen de-assert Capabilities bit 7 EVENT pin set to 0 set to 1 A0 pin is 10 V tolerant yes Capabilities bit 5 VHV set to 0 set to 1 I2C spike suppression 50 ns I2C input hysteresis - 0.05 × V DD SE97 Device ID register 1010 0010 Revision ID register 0000 0001 0000 0011 Temperature Sensor accuracy Grade B Improved Grade B Power-On Reset (POR) 0.6 V 1.8 V Temperature Sensor voltage range 3.0 V to 3.6 V EEPROM Write voltage range 3.0 V to 3.6 V EEPROM Read voltage range 1.7 V to 3.6 V 3.0 V to 3.6 V 2mm × 3mm × 0.8 mm package assembly plant Hong Kong assembly plant Bangkok (thicker die and leadframe) |
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