HAL880 datasheet(25/34 Pages) MICRONAS

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DATA SHEET

HAL880

Micronas

Feb. 23, 2009; DSH000152_001EN

4.4. Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient

temperature TA).

At static conditions and continuous operation, the fol-

lowing equation applies:

For typical values use the typical parameters. For

worst case calculation, use the max. parameters for

IDD and Rth, and the max. value for VDD from the appli-

cation.

For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA, the

temperature difference

ΔT = 12.93 K.

For all sensors, the junction temperature TJ is speci-

fied. The maximum ambient temperature TAmax can be

calculated as:

4.5. EMC and ESD

The HAL880 is designed for a stabilized 5 V supply.

Interferences and disturbances conducted along the

12 V on-board system (product standard ISO 7637

part 1) are not relevant for these applications.

For applications with disturbances by capacitive or

inductive coupling on the supply line, or by radiated

disturbances, the application circuit shown in Fig. 4–1

on page 23 is recommended. Applications with this

arrangement should pass the EMC tests according to

the product standards ISO 7637 part 3 (electrical tran-

sient transmission by capacitive or inductive coupling).

Please contact Micronas for the detailed investigation

reports with the EMC and ESD results.

thJ

Amax

Lmax

–

HAL880 Datasheet(PDF) 25 Page - Micronas