PMD9002D datasheet(4/15 Pages) NXP

4 / 15 page

PMD9002D_1

Product data sheet

Rev. 01 — 20 November 2006

4 of 15

NXP Semiconductors

PMD9002D

MOSFET driver

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig 1.

TR2: Power derating curves

Tamb (°C)

−75

175

125

−25

006aaa919

200

300

100

400

500

Ptot

(mW)

(2)

(3)

(1)

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Transistor 2 (TR2)

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

430

K/W

[2] -

385

K/W

[3] -

312

K/W

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