PMD9002D datasheet(6/15 Pages) NXP

6 / 15 page

PMD9002D_1

Product data sheet

Rev. 01 — 20 November 2006

6 of 15

NXP Semiconductors

PMD9002D

MOSFET driver

Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 4.

TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa922

10-5

10-2

10-4

102

10-1

tp (s)

10-3

103

102

103

Zth(j-a)

(K/W)

0.05

0.1

0.02

duty cycle =

0.01

0.75

0.5

0.33

0.2

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Transistor 1 (TR1)

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A

100

ICEO

collector-emitter cut-off

current

VCE = 30 V; IE =0A

µA

VCE = 30 V; IE =0A;

Tj = 150 °C

µA

IEBO

emitter-base cut-off

current

VEB =5V; IE = 0 A

0.9

hFE

DC current gain

VCE =5V; IC =20mA

100

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage

VCE =5V; IC = 0.1 mA

1.1

0.5

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 20 mA

2.5

1.9

bias resistor 1 (input)

3.3

4.7

6.1

Ω

R2/R1

bias resistor ratio

0.8

1.2

Transistor 2 (TR2)

ICBO

collector-base cut-off

current

VCB = 30 V; IE =0A

VCB = 30 V; IE =0A;

Tj = 150 °C

µA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

200

IC = 100 mA; IB = 5 mA

200

400

IC = 200 mA; IB = 20 mA

340

500

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