PMD9002D datasheet(10/15 Pages) NXP

10 / 15 page

PMD9002D_1

Product data sheet

Rev. 01 — 20 November 2006

10 of 15

NXP Semiconductors

PMD9002D

MOSFET driver

Test information

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 13. TR2: Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 14. TR2: Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa933

IC (mA)

10−1

103

102

110

10−1

VCEsat

(V)

10−2

(2)

(3)

(1)

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IC (mA)

10−1

103

102

110

10−1

VCEsat

(V)

10−2

(2)

(3)

(1)

IC = 0.05 A; IB = 2.5 mA; RC = 180 Ω

Fig 15. Test circuit for switching times

006aaa936

450

Ω

VCC

DUT

TR1

oscilloscope

450

Ω

(probe)

oscilloscope

TR2

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