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PMD9002D Datasheet(PDF) 7 Page - NXP Semiconductors |
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PMD9002D Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 15 page  PMD9002D_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 November 2006 7 of 15 NXP Semiconductors PMD9002D MOSFET driver [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 0.7 - V IC = 100 mA; IB = 5 mA - 0.9 - V VBE base-emitter voltage VCE =5V; IC = 2 mA 610 660 710 mV VCE =5V; IC = 10 mA - - 770 mV Diode (D1) VF forward voltage IF = −200 mA [1] -- −1.1 V TR2 and D1 hFE DC current gain VCE =5V; IC = 1 mA 200 290 450 VCE =5V; IC = 100 mA 95 140 - VCE =5V; IC = 200 mA 24 35 - Device td delay time IC = 0.05 A; IB = 2.5 mA - 13 - ns tr rise time - 70 - ns ton turn-on time - 83 - ns ts storage time - 1380 - ns tf fall time - 260 - ns toff turn-off time - 1640 - ns Table 7. Characteristics …continued Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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