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PMD9002D Datasheet(PDF) 1 Page - NXP Semiconductors |
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PMD9002D Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 15 page ![]() 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Two transistors and one high-speed switching diode as driver I Totem pole configuration I Application-optimized pinout I Internal connections to minimize layout effort I Space-saving solution I Reduces component count 1.3 Applications I MOSFET driver 1.4 Quick reference data [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. PMD9002D MOSFET driver Rev. 01 — 20 November 2006 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor IC collector current - - 0.1 A Transistor 2 (TR2) VCEO collector-emitter voltage open base - - 45 V ICM peak collector current single pulse; tp ≤ 1ms - - 0.2 A Diode (D1) IF forward current - - −0.2 A VF forward voltage IF = −200 mA [1] -- −1.1 V |
Similar Part No. - PMD9002D |
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Similar Description - PMD9002D |
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