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S3C70F2 Datasheet(PDF) 29 Page - Samsung semiconductor |
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S3C70F2 Datasheet(HTML) 29 Page - Samsung semiconductor |
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29 / 38 page ![]() S3C70F2/C70F4/P70F4 S3P70F4 OTP 16-3 Table 16-1. Descriptions of Pins Used to Read/Write the EPROM Main Chip During Programming Pin Name Pin Name Pin No. I/O Function P6.2 SDAT 28 (30) I/O Serial data pin. Output port when reading and input port when writing. Can be assigned as a Input / push-pull output port. P6.3 SCLK 29 (31) I/O Serial clock pin. Input only pin. TEST V PP(TEST) 4 (4) I Power supply pin for EPROM cell writing (indicates that OTP enters into the writing mode). When 12.5 V is applied, OTP is in writing mode and when 5 V is applied, OTP is in reading mode. (Option) RESET RESET 7 (7) I Chip initialization V DD / VSS V DD / VSS 30/1 (32/1) I Logic power supply pin. VDD should be tied to +5 V during programming. NOTE: ( ) means the 32-SOP OTP pin number. Table 16-2. Comparison of S3P70F4 and S3C70F2/C70F4 Features Characteristic S3P70F4 S3C70F2/C70F4 Program Memory 4 K-byte EPROM 2 K-byte mask ROM: S3C70F2 4 K-byte mask ROM: S3C70F4 Operating Voltage (V DD) 2.0 V to 5.5 V 1.8 V to 5.5V OTP Programming Mode V DD = 5 V, VPP(TEST)=12.5V – Pin Configuration 30 SDIP, 32 SOP 30 SDIP, 32 SOP EPROM Programmability User Program one time Programmed at the factory OPERATING MODE CHARACTERISTICS When 12.5 V is supplied to the V PP(TEST) pin of the S3P70F4, the EPROM programming mode is entered. The operating mode (read, write, or read protection) is selected according to the input signals to the pins listed in Table 16–3 below. Table 16-3. Operating Mode Selection Criteria V DD V pp(TEST) REG/MEM ADDRESS(A15-A0) R/W MODE 5 V 5 V 0 0000H 1 EPROM read 12.5 V 0 0000H 0 EPROM program 12.5 V 0 0000H 1 EPROM verify 12.5 V 1 0E3FH 0 EPROM read protection NOTE: "0" means Low level; "1" means High level. |
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