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TLE7181EM Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # TLE7181EM
Description  H-Bridge and Dual Half Bridge Driver IC
PDF  29 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE7181EM Datasheet(HTML) 8 Page - Infineon Technologies AG

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H-Bridge and Dual Half Bridge Driver IC
TLE7181EM
General Product Characteristics
Data Sheet
8
Rev 1.1, 2010-09-30
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
4.2
Functional Range
ESD Susceptibility
4.1.28
ESD Resistivity3)
VESD
–2
kV
4.1.29
CDM
VCDM
–1
kV
1) Not subject to production test, specified by design.
2) Reflow profile IPC/JEDEC J-STD-020C
3) ESD susceptibility HBM according to EIA/JESD 22-A 114B
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
4.2.1
Specified supply voltage range
VVS1
7.0
34
V
–
4.2.2
supply voltage range1)
1) operation above 34V limited by max. allowed power dissipation and max. ratings
VVS2
5.5
45
V
VVS<7V reduced
functionality
4.2.3
Quiescent current at VS
IQVS1
–8
µA
VVS,VVDH=12V;
ENA=Low; T
j=25°C
4.2.4
Quiescent current at VS
IQVS2
–10
µA
VVS,VVDH<15V;
ENA=Low; T
j≤85°C
4.2.5
Quiescent current at VDH
IQVDH1
–8
µA
VVS,VVDH=12V;
ENA=Low; T
j=25°C
4.2.6
Quiescent current at VDH
IQVDH2
–10
µA
VVS,VVDH<15V;
ENA=Low; T
j≤85°C
4.2.7
Supply current at Vs (device
enabled)2)
2) Current can be higher, if driver output stages are unsupplied
IVs(1)
–
22
mA
no switching
4.2.8
Supply current at Vs (device
enabled)
IVs(2)
–45
mA
4xQGSxfPWM≤20mA
; VVS=7.0..34V
4.2.9
D.C. switch on time of output
stages
DDC
–
∞
s–
4.2.10
Duty cycle Highside output stage3)
3) max. limit of D.C. will increase, if
fPWM or external gate charge of the MOSFETs is reduced
DHS
095
%
fPWM=20kHz;
continuous
operation;
CBS ≥330nF
4.2.11
Duty cycle Lowside output stage
DLS
0100
%
–
Absolute Maximum Ratings (cont’d)1)
40
°C ≤ T
j ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.



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