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TLE7181EM Datasheet(PDF) 11 Page - Infineon Technologies AG |
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TLE7181EM Datasheet(HTML) 11 Page - Infineon Technologies AG |
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11 / 29 page ![]() Data Sheet 11 Rev 1.1, 2010-09-30 H-Bridge and Dual Half Bridge Driver IC TLE7181EM Description and Electrical Characteristics Figure 3 Block Diagram of Driver Stages including Short Circuit Detection 5.1.3 Dead Time In bridge applications it has to be assured that the external high side and low side MOSFETs are not “on” at the same time, connecting directly the battery voltage to GND. The dead time generated in the TLE7181EM can be programmed by applying an resistor between the DT pin and GND. Higher external resistor values lead to higher dead time. A minimum dead time applied, if the DT pin is connected to GND. The typical dead time can be calculated with the following formula: If an exact dead time of the bridge is needed, the use of the µC PWM generation unit is recommended. 5.1.4 Bootstrap Principle The TLE7181EM provides a bootstrap based supply for its high side output stages. The bootstrap capacitors are charged by switching on the external low side MOSFETs, connecting the bootstrap capacitor to GND. Under this condition the bootstrap capacitor will be charged from the VREG capacitor via the integrated bootstrap diode. If the low side MOSFET is switched off and the high side MOSFET is switched on, the bootstrap capacitor will float together with the SHx voltage to the supply voltage of the bridge. Under this condition the supply current of the high side output stage will discharge the bootstrap capacitor. This current is specified. The size of the capacitor together with this current will determine how long the high side MOSFET can be kept on without recharging the bootstrap capacitor. GHx SHx VDH V SCP + - Level shifter Floating HS driver 2x GLx SL VSCP + - Level shifter Floating LS driver 2x VREG Voltage regulator BHx VREG ENA VS Error logic Reset Power On Reset ____ ERR short circuit filter SCD SCD SCD Input Logic Dead Time lock / unlock PWM DIR ON / OFF ON / OFF GND DT Short Circuit Detection Level SCDL VDH VRE G blanking DRVDIS Charge pump RPP ] [ 4 4 . 2 02 . 0 081 . 0 ] [ Ω + + = k Rdt deadtime µs t |
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