TLE7181EM datasheet(14/29 Pages) INFINEON

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H-Bridge and Dual Half Bridge Driver IC

TLE7181EM

Description and Electrical Characteristics

Data Sheet

Rev 1.1, 2010-09-30

5.1.19

High level output voltage GHx vs.

SHx1)2)

GHx4

5.0

diode

––V

VS=7.0V;

Load=20nF;

D.C.=95%;

PWM=20kHz;

passive

freewheeling

5.1.20

High level output voltage GHx vs.

SHx1)

GHx5

5.0

––V

VS=7.0V;

Load=20nF;

D.C.=95%;

PWM=20kHz

5.1.21

High level output voltage GLx vs.

SLx1)

GLx5

6.0

––V

VS=7.0V;

Load=20nF;

D.C.=95%;

PWM=20kHz

5.1.22

High level output voltage GHx vs.

SHx1)

GHx5

–

7.0V

≤V

VS≤13.5V;

Load=20nF;

D.C.=100%

5.1.23

High level output voltage GLx vs.

SLx1)

GLx5

6.5

––V

VS=7.0V;

Load=20nF;

D.C.=100%

5.1.24

Rise time

rise

–250

–

Load=11nF;

Load=1Ω;

VS=7V;

20-80%

5.1.25

Fall time

fall

–

200

–

5.1.26

High level output voltage (in

passive clamping)1)

GxxUV

–

1.2

Sleep mode or

VS_UVLO

5.1.27

Pull-down resistor at BHx to GND

BHUVx

––

Sleep mode or

VS_UVLO

5.1.28

Pull-down resistor at VREG to GND

VRUV

––

Sleep mode or

VS_UVLO

5.1.29

Bias current into BHx

BHx

––

150

µA

CBS>5V;

no switching

5.1.30

Bias current out of SHx

SHx

–40

–

µA

SHx=VSL;

ENA=HIGH;

affected highside

output stage static

on;

CBS>5V

5.1.31

Bias current out of SL

––

1.4

0≤V

SHx≤VVS+1V;

ENA=HIGH;

no switching;

CBS>5V

Electrical Characteristics MOSFET Drivers

S = 7.0 to 34V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin

(unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

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