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MSP430F449IPZ Datasheet(PDF) 1 Page - Texas Instruments |
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MSP430F449IPZ Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 79 page  MSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44x MIXED SIGNAL MICROCONTROLLER SLAS344G − JANUARY 2002 − REVISED OCTOBER 2009 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: − Active Mode: 280 µA at 1 MHz, 2.2 V − Standby Mode: 1.1 µA − Off Mode (RAM Retention): 0.1 µA D Five Power Saving Modes D Wake-Up From Standby Mode in Less Than 6 µs D 16-Bit RISC Architecture, 125-ns Instruction Cycle Time D 12-Bit A/D Converter With Internal Reference, Sample-and-Hold and Autoscan Feature D 16-Bit Timer_B With Three† or Seven‡ Capture/Compare-With-Shadow Registers D 16-Bit Timer_A With Three Capture/Compare Registers D On-Chip Comparator D Serial Communication Interface (USART), Select Asynchronous UART or Synchronous SPI by Software: − Two USARTs (USART0, USART1)† − One USART (USART0)‡ D Brownout Detector D Supply Voltage Supervisor/Monitor With Programmable Level Detection D Serial Onboard Programming, No External Programming Voltage Needed Programmable Code Protection by Security Fuse D Integrated LCD Driver for up to 160 Segments D Bootstrap Loader D Family Members Include: − MSP430F435, MSP430F4351§: 16KB+256B Flash Memory, 512B RAM − MSP430F436, MSP430F4361§: 24KB+256B Flash Memory, 1KB RAM − MSP430F437, MSP430F4371§: 32KB+256B Flash Memory, 1KB RAM − MSP430F447: 32KB+256B Flash Memory, 1KB RAM − MSP430F448, MSP430F4481§: 48KB+256B Flash Memory, 2KB RAM − MSP430F449, MSP430F4491§: 60KB+256B Flash Memory, 2KB RAM D For Complete Module Descriptions, See The MSP430x4xx Family User’s Guide, Literature Number SLAU056 † MSP430F43x, and MSP430F43x1 devices ‡ MSP430F44x, and MSP430F44x1 devices § The MSP430F43x1 and MSP430F44x1 devices are identical to the MSP430F43x and MSP430F44x devices, respectively − with the exception that the ADC12 module is not implemented. description The Texas Instruments MSP430 family of ultralow power microcontrollers consists of several devices featuring different sets of peripherals targeted for various applications. The architecture, combined with five low-power modes, is optimized to achieve extended battery life in portable measurement applications. The devices feature a powerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to maximum code efficiency. The digitally controlled oscillator (DCO) allows wake-up from low-power modes to active mode in less than 6 µs. This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. These devices have limited built-in ESD protection. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 2009, Texas Instruments Incorporated Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. |
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