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LH28F008SC Datasheet(PDF) 25 Page - Sharp Corporation |
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LH28F008SC Datasheet(HTML) 25 Page - Sharp Corporation |
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25 / 38 page ![]() 8M (1M × 8) Flash Memory LH28F008SC 25 AC CHARACTERISTICS - Read Only Operations1 VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C SYMBOL PARAMETER LH28F008SC-120 LH28F008SC-150 UNIT NOTE MIN. MAX. MIN. MAX. t AVAV Read Cycle Time 120 150 ns t AVQV Address to Output Delay 120 150 ns t ELQV CE » to Output Delay 120 150 ns 2 t PHQV RP » High to Output Delay 600 600 ns t GLQV OE » to Output Delay 50 55 ns 2 t ELQX CE » to Output in Low Z 0 0 ns 3 t EHQZ CE » High to Output in High Z 55 55 ns 3 t GLQX CE » to Output in Low Z 0 0 ns 3 t GHQZ OE » High to Output in High Z 20 25 ns 3 t OH Output Hold from Addresses, CE » or OE » change, whichever is first 00 ns 3 VCC = 5 V ± 0.5 V, 5 V ± 0.25 V, TA = 0°C to +70°C SYMBOL PARAMETER LH28F00SC-855 V CC ± 5% LH28F00SC-906 V CC ± 10% LH28F00SA-1206 V CC ± 10% UNIT NOTE MIN. MAX. MIN. MAX. MIN. MAX. t AVAV Read Cycle Time 85 90 120 ns t AVQV Address to Output Delay 85 90 120 ns t ELQV CE » to Output Delay 85 90 120 ns 2 t PHQV RP » High to Output Delay 400 400 400 ns t GLQV OE » to Output Delay 40 45 50 ns 2 t ELQX CE » to Output in Low Z 0 0 0 ns 3 t EHQZ CE » High to Output in High Z 55 55 55 ns 3 t GLQX CE » to Output in Low Z 00 0ns 3 t GHQZ OE » High to Output in High Z 10 10 15 ns 3 t OH Output Hold from Addresses, CE » or OE » change, whichever is first 00 0ns 3 NOTES: 1. See AC Input/Output Reference Waveform for maximum allowable input slew rate. 2. OE » may be delayed to to tELQV - tGLQV after the falling edge of CE » without inpact on tELQV. 3. Sampled, not 100% tested. 4. See Ordering Information for device speeds (valid operational combinations). 5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Speed Configuration) for testing characteristics. 6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration) for testing characteristics. |
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