Vishay Siliconix

Si8802DB

New Product

Document Number: 67999

S11-1386-Rev. A, 11-Jul-11

www.vishay.com

1

This document is subject to change without notice.

N-Channel 8 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

•

Small 0.8 mm x 0.8 mm Outline Area

•

Low 0.4 mm max. profile

• Low On-Resistance

APPLICATIONS

•

Load Switch with Low Voltage Drop

•

Load Switch for 1.2 V, 1.5 V, 1.8 V Power Lines

•

Smart Phones, Tablet PCs, Portable Media Players

Notes:

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.

d. Maximum under steady state conditions is 185 °C/W.

e. Maximum under steady state conditions is 330 °C/W.

PRODUCT SUMMARY

a

8

3.5

4.3 nC

3.3

3.1

2.3

1.0

MICRO FOOT

Device Marking: 802

xxx = Date/Lot Traceability Code

Ordering Information: Si8802DB-T2-E1 (Lead (Pb)-free and Halogen-free)

Bump Side View

Backside View

S

D

G

S

1

2

4

3

N-Channel MOSFET

G

D

S

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

8

V

Gate-Source Voltage

± 5

A

Pulsed Drain Current (t = 300 µs)

15

Continuous Source-Drain Diode Current

Maximum Power Dissipation

W

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

 5 s

105

135

°C/W

200

260