SI8802DB datasheet(4/8 Pages) VISHAY

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Document Number: 67999

S11-1386-Rev. A, 11-Jul-11

Vishay Siliconix

Si8802DB

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

0.3

0.4

0.5

0.6

0.7

0.8

- 50

- 25

100

125

150

J -Temperature (°C)

D = 250 μA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.03

0.06

0.09

0.12

0.15

012345

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 1 A

Time (s)

1000

0.1

0.01

0.001

100

Safe Operating Area, Junction-to-Ambient

0.01

0.1

100

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

10 s, 1s, 100 ms

Limited by R

DS(on)*

1 ms

A = 25 °C

BVDSS Limited

10 ms

100 μs

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