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AN2871 Datasheet(PDF) 8 Page - STMicroelectronics |
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AN2871 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 25 page ![]() On-chip voltage regulator (VREG) AN2871 8/25 Doc ID 15304 Rev 3 2.1.3 Recommended transistors Transistor specifications give the minimum and maximum gain. The worst case is usually significantly lower than the nominal figure on the transistor datasheet cover page. Moreover, the datasheet values are usually given at room temperature. The required gain should be calculated at cold temperature, because a bipolar transistor has minimum gain at low temperature. The worst case gain at cold temperature can be obtained from the transistor manufacturer or can be estimated using the graphs given in the transistor datasheet. The Table 1 lists the recommended ballast transistors. In the following, as example, are shown parameters of BCP68 and BC817 transistors. BCP68 NPN bipolar 1 A/1.5 W SOT223 This transistor is available from several semiconductor makers. Table 1. Approved NPN ballast transistor Part Manufacturer Approved derivatives(1) 1. For automotive applications please check with the appropriate transistor vendor for automotive grade certification BCP68 ON Semi BCP68 NXP BCP68-25 Infineon BCP68-25 BCX68 Infineon BCX68-10;BCX68-16;BCX68-25 BC868 NXP BC868 BC817 Infineon BC817-16;BC817-25;BC817SU; NXP BC817-16;BC817-25 BCP56 ST BCP56-16 Infineon BCP56-10;BCP56-16 ON Semi BCP56-10 NXP BCP56-10;BCP56-16 Table 2. ON Semiconductor datasheet: BCP68 electrical characteristics at 25 °C Symbol Parameter Min Typ Max Unit hFE — DC current gain IC = 5.0 mA; VCE = 10 VDC IC = 150 mA; VCE = 1 VDC IC = 1.0 mA; VCE = 1 VDC 50 85 60 — — — — 375 — — |
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