AN4242 datasheet(19/26 Pages) STMICROELECTRONICS

19 / 26 page

DocID024196 Rev 1

19/26

AN4242

New 650 V JBS SiC diodes

3.3.3

PSpice electro-thermal simulation result

The interest of the dimensioning of the ST’s JBS structure compared to another JBS

positioning can clearly be highlighted with the electro-thermal simulation. Figure 17 and

Figure 18 present the result of the PSpice simulation respectively for an IFSM waveform and

a startup phase in a PFC application. The electrical model of the STPSC6H065D is

compared to one of the other 6 A JBS technologies coupled with a thermal model similar to

the one of the STPSC6H065D.

Figure 17 shows that the higher values of the forward characteristic of the other JBS

technology in Figure 15 lead to a much higher Tj (+ 100°C) compared to ST’s product during

a 42 A IFSM spike.

Figure 17. IFSM electro-thermal simulation with Tj comparison between ST’s 6 A SiC

G2 and another 6 A JBS technology

23456

789

100

200

300

350

2.0

6.0

8.0

Tj (°C)

IF (A)

VF (V)

Time (ms)

250

150

4.0

FSM 42A@Tc=25 °C

F typSTPSC6H065

F typ6A other JBS techno

other JBS techno

=300 °C

STPSC6H065=200 °C

AN4242 Datasheet(PDF) 19 Page - STMicroelectronics