Conclusion

AN4242

24/26

DocID024196 Rev 1

5

Conclusion

To keep its leadership in power rectifiers, ST developed a complete portfolio of silicon

carbide diodes that are more and more popular in power converters thanks to their very high

switching performance.

To help designers in their quest for more current density and helping them to reduce cost,

STMicroelectronics developed a second generation of SiC Schottky rectifiers. The design of

these new diodes provides increased robustness while not impacting their performance and

blocks the effect of the positive thermal coefficient of the silicon carbide material. These new

diodes have already proven to be very efficient in high-power SMPS.

To help designers reduce their time to market, STMicroelectronics developed a complete

electro-thermal model of the diode. Combined with a model of the electrical circuit in which

the SiC rectifier is used, the model can simulate all the worst case conditions of the transient

phases of the power-supply. This way, power-supply designers can verify that the diode is

completely safe in all conditions.

Supporting a wide range of applications, ST’s SiC rectifiers are available in a variety of

supported currents and packages, giving more flexibility on the power density/power

dissipation trade-off.