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LM34922MY/NOPB Datasheet(PDF) 2 Page - Texas Instruments

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Part # LM34922MY/NOPB
Description  28V, 2A Constant On-Time Switching Regulator with Adjustable Current Limit
PDF  19 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM34922MY/NOPB Datasheet(HTML) 2 Page - Texas Instruments

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SW
BST
FB
CS
CSG
RT
VIN
PGD
SGND
SS
Exposed Pad on Bottom
Connect to Ground
1
2
3
4
5
10
9
8
7
6
LM34922
SNVS813A – JUNE 2012 – REVISED MARCH 2013
www.ti.com
Connection Diagram
Figure 1. Top View
10-Lead HVSSOP-PowerPAD
PIN DESCRIPTIONS
Pin No.
Name
Description
Application Information
1
VIN
Input supply voltage
Operating input range is 6V to 28V. Transient capability is 30V. A low ESR
capacitor must be placed as close as possible to the VIN and SGND pins.
2
RT
On-time Control
An external resistor from VIN to this pin sets the buck switch on-time, and the
switching frequency.
3
PGD
Power Good
Logic output indicates when the voltage at the FB pin has increased to above
95% of the internal reference voltage. Hysteresis is provided. An external
pull-up resistor to a voltage less than 7V is required.
4
SS
Soft-Start
An internal current source charges an external capacitor to provide the soft-
start function.
5
SGND
Signal Ground
Ground for all internal circuitry other than the current limit sense circuit.
6
FB
Feedback
Internally connected to the regulation comparator. The regulation level is
2.51V.
7
CSG
Current Sense Ground
Ground connection for the current limit sensing circuit. Connect to ground
and to the current sense resistor.
8
CS
Current sense
Connect to the current sense resistor and the anode of the free-wheeling
diode.
9
SW
Switching Node
Internally connected to the buck switch source. Connect to the external
inductor, cathode of the free-wheeling diode, and bootstrap capacitor.
10
BST
Bootstrap capacitor connection of the
Connect a 0.1µF capacitor from SW to this pin. The capacitor is charged
buck switch gate driver.
during the buck switch off-time via an internal diode.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 2012–2013, Texas Instruments Incorporated
Product Folder Links: LM34922



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