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THS4281DBVT Datasheet(PDF) 4 Page - Texas Instruments |
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THS4281DBVT Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 43 page ![]() THS4281 SLOS432B – APRIL 2004 – REVISED OCTOBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted). (1) MIN MAX UNIT Supply voltage, VS– to VS+ 16.5 V Input voltage, VI ±VS ± 0.5 V Differential input voltage, VID ±2 V Output current, IO ±100 mA Continuous power dissipation See Dissipation Ratings Table Maximum junction temperature, any condition, (2) TJ +150 °C Maximum junction temperature, continuous operation, long-term reliability(2) TJ 125° °C Storage temperature, Tstg –65 150 °C (1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. recommended operating conditions. 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3500 Charged-device model (CDM), per JEDEC specification JESD22- V(ESD) Electrostatic discharge ±1500 V C101(2) Machine Model (MM) ±100 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN MAX UNIT Dual supply ±1.35 ±8.25 Supply voltage, (VS+ and VS –) V Single supply 2.7 16.5 6.4 Thermal Information THS4281 THERMAL METRIC(1) DBV (SOT-23) D (SOIC) DGK (VSSOP) UNIT 5 PINS 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance (2) 154.4 126.6 192.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 115 69 77.7 °C/W RθJB Junction-to-board thermal resistance 31.4 64.7 112.8 °C/W ψJT Junction-to-top characterization parameter 14.7 20.5 14.6 °C/W ψJB Junction-to-board characterization parameter 31 64.3 111.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. (2) This data was taken using the JEDEC standard High-K test PCB. 4 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: THS4281 |
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