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THS4281DBVT Datasheet(PDF) 4 Page - Texas Instruments

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Part # THS4281DBVT
Description  Voltage-Feedback Operational Amplifier
PDF  43 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

THS4281DBVT Datasheet(HTML) 4 Page - Texas Instruments

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THS4281
SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted).
(1)
MIN
MAX
UNIT
Supply voltage, VS– to VS+
16.5
V
Input voltage, VI
±VS ± 0.5
V
Differential input voltage, VID
±2
V
Output current, IO
±100
mA
Continuous power dissipation
See Dissipation Ratings
Table
Maximum junction temperature, any condition, (2) TJ
+150
°C
Maximum junction temperature, continuous operation, long-term reliability(2) TJ
125°
°C
Storage temperature, Tstg
–65
150
°C
(1)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device. recommended operating conditions.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±3500
Charged-device model (CDM), per JEDEC specification JESD22-
V(ESD)
Electrostatic discharge
±1500
V
C101(2)
Machine Model (MM)
±100
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
MAX
UNIT
Dual supply
±1.35
±8.25
Supply voltage, (VS+ and VS –)
V
Single supply
2.7
16.5
6.4 Thermal Information
THS4281
THERMAL METRIC(1)
DBV (SOT-23)
D (SOIC)
DGK (VSSOP)
UNIT
5 PINS
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance (2)
154.4
126.6
192.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
115
69
77.7
°C/W
RθJB
Junction-to-board thermal resistance
31.4
64.7
112.8
°C/W
ψJT
Junction-to-top characterization parameter
14.7
20.5
14.6
°C/W
ψJB
Junction-to-board characterization parameter
31
64.3
111.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
This data was taken using the JEDEC standard High-K test PCB.
4
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Copyright © 2004–2015, Texas Instruments Incorporated
Product Folder Links: THS4281



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