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STH315N10F7-2 Datasheet(PDF) 7 Page - STMicroelectronics |
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STH315N10F7-2 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 19 page ![]() DocID025090 Rev 4 7/19 STH315N10F7-2, STH315N10F7-6 Electrical characteristics 19 Figure 8. Normalized V(BR)DSS vs temperature Figure 9. Capacitance variations Figure 10. Source-drain diode forward characteristics Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on-resistance vs temperature 0 -25 75 25 -75 125 V(BR)DSS TJ(°C) (norm) 0.94 0.96 0.98 1.00 1.02 1.04 ID = 1mA AM14742v1 C 6000 4000 2000 0 0 40 VDS(V) (pF) 20 8000 60 Ciss Coss Crss 10000 14000 80 100 12000 AM14738v1 TJ=-50°C TJ=150°C TJ=25°C VSD 0 40 ISD(A) (V) 160 80 120 0.45 0.55 0.65 0.75 0.85 0.95 1.05 AM14739v1 VGS(th) 0.90 0.80 0.70 0.60 TJ(°C) (norm) 1.0 0 -25 75 25 -75 125 ID = 250µA AM14741v1 RDS(on) 1.6 1.2 0.8 0.4 0 TJ(°C) (norm) -25 75 25 -75 125 2.0 ID = 60A AM14740v1 |
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